features x built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit) x the bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. they also have the advantage of almost completely eliminating parasitic effects x only the on/off conditions need to be set for operation, making device design easy absolute maximum ratings parameter symbol value unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current-continuous i c -100 ma collector dissipation p c 200 mw junction temperature range t j -55~150 : storage temperature range t stg -55~150 : electrical characteristics sym parameter min typ max unit v (br)cbo collector-base breakdown voltage (i c =-50ua, i e =0) -50 --- --- v v (br)ceo collector-emitter breakdown voltage (i c =-1ma, i b =0) -50 --- --- v v (br)ebo emitter-base breakdown voltage (i e =-50ua, i c =0) -5 --- --- v i cbo collector cut-off current (v cb =-50v, i e =0) --- --- -0.5 ua i ebo emitter cut-off current (v eb =-4v, i c =0) --- --- -0.5 ua h fe dc current gain (v ce =-5v, i c =-1ma) 100 250 600 --- v ce(sat) collector-emitter saturation voltage (i c =-10ma, i b =-1ma) --- --- -0.3 v r 1 input resistor f t transition frequency (v ce =-10v, i c =-5ma, f=100mhz) --- 250 --- mhz sot-23 suggested solder pad layout .079 2.000 in c h es mm . 03 1 .800 .035 .900 . 03 7 .950 .037 .950 710 13 k ? *marking: 94 epoxy meets ul 94 v-0 flammability rating moisure sensitivity level 1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012- 0 willas electronic corp. pnp digital transistor DTA114TCA
2012- 0 willas electronic corp. pnp digital transistor DTA114TCA
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